Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2009-12-14
2010-11-09
Le, Thong Q (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185170, C365S185200, C365S185160, C365S185260
Reexamination Certificate
active
07830724
ABSTRACT:
A nonvolatile memory device comprises a memory cell array wherein a plurality of memory cell transistors are divided into multiple erase blocks. The multiple erase blocks are separated from each other by dummy word lines. During an erase operation of one of the multiple blocks, a dummy word line separating the one of the multiple blocks from other erase blocks is driven with a coupling inhibition voltage.
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Choi Jung-Dal
Park Ki-Tae
Le Thong Q
Samsung Electronics Co,. Ltd.
Volentine & Whitt PLLC
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