Nonvolatile memory device with NAND cell strings

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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C365S185170, C365S185200, C365S185160, C365S185260

Reexamination Certificate

active

07830724

ABSTRACT:
A nonvolatile memory device comprises a memory cell array wherein a plurality of memory cell transistors are divided into multiple erase blocks. The multiple erase blocks are separated from each other by dummy word lines. During an erase operation of one of the multiple blocks, a dummy word line separating the one of the multiple blocks from other erase blocks is driven with a coupling inhibition voltage.

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