Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2011-03-29
2011-03-29
Elms, Richard (Department: 2824)
Static information storage and retrieval
Floating gate
Particular connection
C365S185220, C365S185250
Reexamination Certificate
active
07916542
ABSTRACT:
A nonvolatile memory device includes a memory cell array having multiple memory cells arranged at intersections of word lines and bit lines, a first page region configured with at least two adjacent memory cells coupled to a word line, and a second page region configured with at least two adjacent memory cells coupled to the word line. The nonvolatile memory devices also includes a first common source line connecting with the memory cells of the first page region, and a second common source line connecting with the memory cells of the second page region. The first and second common source lines are controlled independently.
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Kim Hyun-Kyoung
Park Ki-Tae
Elms Richard
Nguyen Hien N
Samsung Electronics Co,. Ltd.
Volentine & Whitt P.L.L.C.
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