Nonvolatile memory device with multiple page regions, and...

Static information storage and retrieval – Floating gate – Particular connection

Reexamination Certificate

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C365S185220, C365S185250

Reexamination Certificate

active

07916542

ABSTRACT:
A nonvolatile memory device includes a memory cell array having multiple memory cells arranged at intersections of word lines and bit lines, a first page region configured with at least two adjacent memory cells coupled to a word line, and a second page region configured with at least two adjacent memory cells coupled to the word line. The nonvolatile memory devices also includes a first common source line connecting with the memory cells of the first page region, and a second common source line connecting with the memory cells of the second page region. The first and second common source lines are controlled independently.

REFERENCES:
patent: 5089992 (1992-02-01), Shinohara
patent: 5867429 (1999-02-01), Chen et al.
patent: 7224611 (2007-05-01), Yamamoto et al.
patent: 7508691 (2009-03-01), Gupta et al.
patent: 7535761 (2009-05-01), Park et al.
patent: 08-185698 (1996-07-01), None
patent: 100173935 (1998-11-01), None
patent: 1020060099149 (2006-09-01), None
patent: 1020070000781 (2007-01-01), None

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