Nonvolatile memory device with multiple blocking layers and...

Details Nonvolatile memory device with multiple blocking layers and... Nonvolatile memory device with multiple blocking layers and...

2011-04-19

2011-04-19

Pham, Hoai V (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257SE29129, C257SE29300

Reexamination Certificate

active

07928493

ABSTRACT:
A nonvolatile memory device with a blocking layer controlling the transfer of electric charges in a charge storage layer includes the blocking layer having a first blocking layer in contact with the charge storage layer and a second blocking layer over the first blocking layer, wherein the first blocking layer has a greater energy band gap than the second blocking layer and the second blocking layer has a greater permittivity than the first blocking layer.

REFERENCES:
patent: 2008/0233762 (2008-09-01), Hong
patent: 2009/0280583 (2009-11-01), Hirasawa et al.
patent: 1020010066386 (2001-07-01), None
patent: 1020030002298 (2003-01-01), None
patent: 1020060104717 (2006-10-01), None
Korean Office Action for Korean application No. 10-2008-0040832.

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