Nonvolatile memory device with a non-planar gate-insulating...

Details Nonvolatile memory device with a non-planar gate-insulating... Nonvolatile memory device with a non-planar gate-insulating...

2006-05-02

2006-05-02

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S321000, C257S345000

Reexamination Certificate

active

07038270

ABSTRACT:
A non-volatile memory device with a non-planar gate insulating layer and a method of fabricating the same are provided. The device includes a tunnel insulating pattern, a charge storage layer, an upper insulating layer and a control gate electrode which are sequentially stacked. A lower insulating pattern, which is covered with the charge storage layer and thicker than the tunnel insulating pattern, is disposed on the semiconductor substrate beside the tunnel insulating layer. A heavily doped region including impurities of the same type as the semiconductor substrate is disposed in the semiconductor substrate under the tunnel insulating pattern.

REFERENCES:
patent: 4949140 (1990-08-01), Tam
patent: 4958321 (1990-09-01), Chang
patent: 5262987 (1993-11-01), Kojima
patent: 5338954 (1994-08-01), Shimoji
patent: 5379253 (1995-01-01), Bergemont
patent: 5691560 (1997-11-01), Sakakibara
patent: 5838616 (1998-11-01), Randazzo
patent: 5856222 (1999-01-01), Bergemont et al.
patent: 5960285 (1999-09-01), Hong
patent: 6323517 (2001-11-01), Park et al.
patent: 6580124 (2003-06-01), Cleeves et al.
patent: 6828618 (2004-12-01), Baker et al.

Affiliated with

Also associated with

Rating

Nonvolatile memory device with a non-planar gate-insulating... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile memory device with a non-planar gate-insulating..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile memory device with a non-planar gate-insulating... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3613061