Nonvolatile memory device utilizing field effect transistor havi

Details Nonvolatile memory device utilizing field effect transistor havi Nonvolatile memory device utilizing field effect transistor havi

1993-03-19

1994-11-01

LaRoche, Eugene R.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365175, G11C 1122

Patent

active

053612256

ABSTRACT:
A nonvolatile memory device having a field effect transistor for storing, which includes source and drain regions in a semiconductor substrate with a channel region interposed between them and a gate electrode above the channel region with a ferroelectric gate film sandwiched between them. Barrier metal is formed in contact with the source region of the field effect transistor for storing to make a Schottky diode in serial connection with the field effect transistor for storing. In reading information, voltage is applied to a serial circuit consisting of the field effect transistor for storing and the Schottky diode to turn the Schottky diode on.

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patent: 5032891 (1991-07-01), Takagi et al.
patent: 5198994 (1993-03-01), Natori
Nikkei Microdevices, Jan. 1992, p. 84, English translation of summary attached.

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