Nonvolatile memory device using variable resistive elements

Details Nonvolatile memory device using variable resistive elements Nonvolatile memory device using variable resistive elements

2007-12-26

2010-10-26

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Addressing

Plural blocks or banks

C365S163000, C365S046000

Reexamination Certificate

active

07821865

ABSTRACT:
The nonvolatile memory device includes a plurality of memory banks, each of which includes a plurality of nonvolatile memory cells. Each cell includes a variable resistive element having a resistance varying depending on stored data. A plurality of global bit lines are included, and each global bit line is shared by the plurality of memory banks. A plurality of main word lines are arranged corresponding to one of the plurality of memory banks.

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Korean Notice of Allowance corresponding to counterpart Korean Application No. 10-2006-0135587 dated Dec. 4, 2008.
Office Action for Korean Application No. 10-2006-0135587 dated Jun. 23, 2008.

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