Nonvolatile memory device using serial diode cell

Static information storage and retrieval – Systems using particular element – Semiconductive

Reexamination Certificate

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C365S145000, C365S149000

Reexamination Certificate

active

06956767

ABSTRACT:
A nonvolatile memory device using a serial diode cell comprises a plurality of serial diode switch cell arrays each having a hierarchical bit line structure including a main bit line and a sub bit line. Each of the plurality of sub cell arrays is embodied as a cross point cell, thereby reducing the whole memory size. Specifically, a unit serial diode cell comprising a nonvolatile ferroelectric capacitor and a serial diode switch which does not require an additional gate control signal is located where a word line and a sub bit line are crossed, thereby reducing the whole chip size.

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patent: 2004/0109340 (2004-06-01), Kang
patent: 1020030024223 (2003-03-01), None

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