Static information storage and retrieval – Systems using particular element – Semiconductive
Reexamination Certificate
2005-10-18
2005-10-18
Phung, Anh (Department: 2824)
Static information storage and retrieval
Systems using particular element
Semiconductive
C365S145000, C365S149000
Reexamination Certificate
active
06956767
ABSTRACT:
A nonvolatile memory device using a serial diode cell comprises a plurality of serial diode switch cell arrays each having a hierarchical bit line structure including a main bit line and a sub bit line. Each of the plurality of sub cell arrays is embodied as a cross point cell, thereby reducing the whole memory size. Specifically, a unit serial diode cell comprising a nonvolatile ferroelectric capacitor and a serial diode switch which does not require an additional gate control signal is located where a word line and a sub bit line are crossed, thereby reducing the whole chip size.
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Heller Ehrman LLP
Hynix / Semiconductor Inc.
Nguyen Dang T.
Phung Anh
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