Nonvolatile memory device using semiconductor nanocrystals...

Details Nonvolatile memory device using semiconductor nanocrystals... Nonvolatile memory device using semiconductor nanocrystals...

2006-05-16

2006-05-16

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S316000

Reexamination Certificate

active

07045851

ABSTRACT:
A floating gate for a field effect transistor (and method for forming the same and method of forming a uniform nanoparticle array), includes a plurality of discrete nanoparticles in which at least one of a size, spacing, and density of the nanoparticles is one of templated and defined by a self-assembled material.

REFERENCES:
patent: 4045302 (1977-08-01), Gibbs et al.
patent: 5714766 (1998-02-01), Chen et al.
patent: 5849215 (1998-12-01), Gin et al.
patent: 5948470 (1999-09-01), Harrison et al.
patent: 6069380 (2000-05-01), Chou et al.
patent: 6090666 (2000-07-01), Ueda et al.
patent: 6139713 (2000-10-01), Masuda et al.
patent: 6171687 (2001-01-01), Leung et al.
patent: 6214746 (2001-04-01), Leung et al.
patent: 6271273 (2001-08-01), You et al.
patent: 6310376 (2001-10-01), Ueda et al.
patent: 6313185 (2001-11-01), Lau et al.
patent: 6320784 (2001-11-01), Muralidhar et al.
patent: 6331463 (2001-12-01), Chen
patent: 6358813 (2002-03-01), Holmes et al.
patent: 6407424 (2002-06-01), Forbes
patent: 6536604 (2003-03-01), Brinker et al.
patent: 6586785 (2003-07-01), Flagan et al.
patent: 6589629 (2003-07-01), Bao et al.
patent: 6705152 (2004-03-01), Routkevitch et al.
patent: 6743406 (2004-06-01), Nayfeh et al.
patent: 2004/0256662 (2004-12-01), Black et al.
patent: 1 256 986 (2002-11-01), None
patent: 2001-233674 (2001-08-01), None
Sandip Tiwari et al., “Volatile and Non-Volatile Memories in Silicon with Nano-Crystal Storage”, IEEE, 1995, pp. 20.4.1-20.4.4, Dec. 1995.
Ya-Chin King et al., “MOS Memory Using Germanium Nanocrystals Formed by Thermal Oxidation of Si1-xGex”, IEEE, 1998, pp. 5.3.1-5.3.4, Dec. 1998.
M. L. Ostraat et al., “Synthesis and characterization of aersol silicon nanocrystal nonvolatile floating-gate memory devices”, Applied Physics Letters, vol. 79, No. 3, Jul. 16, 2001, pp. 433-435.
S. Tiwari et al., “Small silicon memories: confinement, single-electron, and interface state considerations”, Appl. Phys. A 71, 403-414 (2000)/Digital Object Identifier (DOI), Sep. 6, 2000.
Sandip Tiwari et al., “A silicon nanocrystals based memory”, Appl. Phys. Lett. 68 (10), Mar. 4, 1996, pp. 1377-1379.
J. J. Welser et al., “Room Temperature Operation of a Quantum-Dot Flash Memory”, IEEE Electron Device Letters, vol. 18, No. 6, Jun. 1997, pp. 278-280.
Hussein I. Hanafi et al., “Fast and Long Retention-Time Nano-Crystal Memory”, IEEE Translations on Electron Devices, vol. 43, No. 9, Sep. 1996, pp. 1553-1558.
Paolo Pavan et al., “Flash Memory Cells-An Overview”, Proceedings of the IEEE, vol. 85, No. 8, Aug. 1997, pp. 1248-1271.
Ilgweon Kim et al., “Room Temperature Single Electron Effects in a Si Nano-Crystal Memory”, IEEE Electron Device Letters, vol. 20, No. 12, Dec. 1999, pp. 630-631.
Min She et al., “Modeling and Design Study of Nanocrystal Memory Devices”, Dept. of Electrical Engineering and Computer Sciences, University of California Berkeley, CA, pp. 139-140.
Tejal Desai, et al., “Nanoporous Anti-Fouling Silicon Membranes for Biosensor Applications,” Biosensors & Bioelectronics, vol. 15, 2000, pp. 453-462, Dec. 2000.
Guarini K.W., et al. “Process Integration of self-assembled polymer templates into silicon nanofabrication”,Journal of Vacuum Science and Technoloy. B, Miroelectronics and Nanometer Structures Processing, Measurement and Phenomena, American Institute of Physics, New York, NY, US, vol. 20, No. 6, Nov. 2002, pp. 2788-2792, XP012009632 ISSN: 1071-1023.
Guarini, K.W., et al. “Optimization of Diblock Copolymer Thin Film Self Assembly”,Advanced Materials, vol. 14, No. 18, Sep. 16, 2002, pp. 1290-1294, XP002303851 Wiley-VCH, Weinheim, DE, ISSN: 0935-9648.
Park Miri, et al. “Large area dense nanoscale patterning of arbitrary surfaces”,Applied Physics Letters, American Institute of Physics, New York, US, vol. 79, No. 2, Jul. 9, 2001, pp. 257-259, XP012029389 ISSN: 0003-6951.
Guarini, K.W., et al. “Nanoscale patterning using self-assembled polymers for semiconductor applications”,Journal of Vacuum Science and Technology, B. Microelectronics and Nanometer Structures Processing, Measurement and Phenomena, American Institute of Physics, New York, NY, US, vol. 19, No. 6, Nov. 2001, pp. 2784-2788, XP012009128 ISSN: 1071-1023.
Li, R.R., et al. “Dense arrays of ordered GaAs nanostructures by selective area growth on substrates patterned by block copolymer lithography”,Applied Physics Letters, American Institute of Physics, New York, US, vol. 76, No. 13, Mar. 27, 2000, pp. 1689-1691, XP012024907 ISSN: 0003-6951.
Harrison Christopher, et al. “Lithography with a mask of block copolymer microstructures”,Journal of Vacuum Science&TelechnologyB: Microelectronics Processing and Phenomena, American Vacuum Society, New York, NY, US, vol. 16, No. 2, Mar. 1998, pp. 544-552, XP012006671 ISSN: 0734-211X.
Park, M., et al. “Block Copolymer Lithography: Periodic Arrays of about 10 to the 11th holes in 1 Square Centimeter”, Science,American Association for the Advancement of Science, US, vol. 276, May 30, 1997, pp. 1401-1404, XP002223276 ISSN: 0036-8075.
Ostraat, M.L., “Synthesis and characterization of aerosol silicon nanocrystal nonvolatile floating-gate memory sdevices”,Applied Physics Letters, American Institute of Physics, New York, US, vol. 79, No. 3, Jul. 16, 2001, pp. 433-435, XP012029871 ISSN: 0003-6951.
International Search Report dated Nov. 16, 2004.

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