Nonvolatile memory device using hybrid switch cell

Details Nonvolatile memory device using hybrid switch cell Nonvolatile memory device using hybrid switch cell

2008-05-06

2008-05-06

Auduong, Gene N. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S189110, C365S196000

Reexamination Certificate

active

11049682

ABSTRACT:
A nonvolatile memory device using a hybrid switch cell comprises a plurality of hybrid switch cell arrays each having a hierarchical bit line structure including a main bit line and a sub bit line. In the nonvolatile memory device, each sub cell array having the hierarchical bit line structure including a main bit line and a sub bit line is provided as a cross point cell array that comprises a nonvolatile ferroelectric capacitor and a hybrid switch which does not require an additional gate control signal, thereby reducing the whole memory size.

REFERENCES:
patent: 6272594 (2001-08-01), Gupta et al.
patent: 6363439 (2002-03-01), Battles et al.
patent: 6775172 (2004-08-01), Kang et al.
patent: 7072203 (2006-07-01), Kang
patent: 7167386 (2007-01-01), Matsushita

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