Nonvolatile memory device using a variable resistive element...

Details Nonvolatile memory device using a variable resistive element... Nonvolatile memory device using a variable resistive element...

2008-06-11

2010-10-19

Lam, David (Department: 2827)

Static information storage and retrieval

Read/write circuit

Including reference or bias voltage generator

C365S230060, C365S189110, C365S189060

Reexamination Certificate

active

07817479

ABSTRACT:
A nonvolatile memory device that utilizes both a voltage provided outside the memory device and a voltage generated within the device instead of using only a voltage generated within the device as a driving voltage avoids malfunctions of the memory device when instantaneous significant voltage drops occur. The nonvolatile memory device includes a plurality of nonvolatile memory cells, a bit line coupled to at least a portion of the plurality of nonvolatile memory cells, a column-selection transistor coupled to the bit line and a driving circuit. The driving circuit is coupled to a gate of the column-selection transistor and is configured to supply a charge to the gate using a first voltage and a second voltage wherein the second voltage is higher than the first voltage.

REFERENCES:
patent: 7099199 (2006-08-01), Seki et al.
patent: 7259982 (2007-08-01), Johnson
patent: 7280390 (2007-10-01), Kostylev et al.
patent: 7283387 (2007-10-01), Cho et al.
patent: 7352645 (2008-04-01), Sforzin et al.
patent: 2005135458 (2005-05-01), None
patent: 2006-040466 (2006-09-01), None
patent: 100172380 (1998-10-01), None
patent: 1019990015874 (1999-03-01), None
patent: 1020030058287 (2003-07-01), None

Affiliated with

Also associated with

Rating

Nonvolatile memory device using a variable resistive element... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile memory device using a variable resistive element..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile memory device using a variable resistive element... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4159409