Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2011-04-19
2011-04-19
Nguyen, Tan T. (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185020, C365S185030
Reexamination Certificate
active
07929350
ABSTRACT:
A nonvolatile memory device includes a memory cell array; a voltage generator configured to provide stepwise increasing step pulses for varying logic states of memory cells in the memory cell array; and control logic configured to adjust an initial voltage of the stepwise increasing step pulses according to the number of the stepwise increasing step pulses.
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Nguyen Tan T.
Samsung Electronics Co,. Ltd.
Voletine & Whitt, PLLC
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