Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2005-12-07
2010-10-26
Smith, Bradley K (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S314000, C257S239000, C257S261000, C257S043000, C257S003000, C257S004000, C257S005000, C257SE29002, C365S185100, C365S163000, C438S102000, C438S103000
Reexamination Certificate
active
07820996
ABSTRACT:
A nonvolatile memory device using a resistance material and a method of fabricating the same are provided. The nonvolatile memory device includes a switching element, and a data storage part electrically connected to the switching element. In the data storage part, a lower electrode is connected to the switching element, and an insulating layer is formed on the lower electrode to a predetermined thickness. The insulating layer has a contact hole exposing the lower electrode. A data storage layer is filled in the contact hole and the data storage layer is formed of transition metal oxide. An upper electrode is formed on the insulating layer and the data storage layer.
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Choi Sung-kyu
Kim Kyu-sik
Lee Jung-hyun
Harness & Dickey & Pierce P.L.C.
Samsung Electronics Co,. Ltd.
Smith Bradley K
Valentine Jami M
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