Static information storage and retrieval – Format or disposition of elements
Reexamination Certificate
2008-02-14
2010-11-30
Luu, Pho M (Department: 2824)
Static information storage and retrieval
Format or disposition of elements
C365S210130, C365S189150, C365S148000
Reexamination Certificate
active
07843716
ABSTRACT:
A nonvolatile memory device includes a stack-type memory cell array, a selection circuit and a read circuit. The memory cell array includes multiple memory cell layers and a reference cell layer, which are vertically laminated. Each of the memory cell layers includes multiple nonvolatile memory cells for storing data, and the reference cell layer includes multiple reference cells for storing reference data. The selection circuit selects a nonvolatile memory cell from the memory cell layers and at least one reference cell, corresponding to the selected nonvolatile memory cell, from the reference cell layer. The read circuit supplies a read bias to the selected nonvolatile memory cell and the selected reference cell corresponding to the selected nonvolatile memory cell, and reads data from the selected nonvolatile memory cell.
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Cho Woo-yeong
Kang Sang-beom
Oh Hyung-rok
Park Joon-min
Bui Tha-o
Luu Pho M
Samsung Electronics Co,. Ltd.
Volentine & Whitt P.L.L.C.
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