Nonvolatile memory device having memory and reference cells

Static information storage and retrieval – Format or disposition of elements

Reexamination Certificate

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Details

C365S210130, C365S189150, C365S148000

Reexamination Certificate

active

07843716

ABSTRACT:
A nonvolatile memory device includes a stack-type memory cell array, a selection circuit and a read circuit. The memory cell array includes multiple memory cell layers and a reference cell layer, which are vertically laminated. Each of the memory cell layers includes multiple nonvolatile memory cells for storing data, and the reference cell layer includes multiple reference cells for storing reference data. The selection circuit selects a nonvolatile memory cell from the memory cell layers and at least one reference cell, corresponding to the selected nonvolatile memory cell, from the reference cell layer. The read circuit supplies a read bias to the selected nonvolatile memory cell and the selected reference cell corresponding to the selected nonvolatile memory cell, and reads data from the selected nonvolatile memory cell.

REFERENCES:
patent: 6359829 (2002-03-01), Van Den Berg
patent: 6646912 (2003-11-01), Hurst et al.
patent: 7009278 (2006-03-01), Hsu
patent: 2006/0067149 (2006-03-01), Shimizu et al.
patent: 2005136071 (2005-05-01), None
patent: 2005260014 (2005-09-01), None
patent: 2006-294206 (2006-10-01), None
patent: 1020040066420 (2004-07-01), None
patent: 10-2005-0107813 (2005-11-01), None

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