Nonvolatile memory device having ferroelectric film

Details Nonvolatile memory device having ferroelectric film Nonvolatile memory device having ferroelectric film

1993-02-24

1994-11-01

LaRoche, Eugene R.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365117, 365154, 365156, 365182, 365190, G11C 1140

Patent

active

053612248

ABSTRACT:
A nonvolatile memory device for storing data in a flip flop circuit comprising field effect transistors having respective ferroelectric gate films. A pair of writing/reading transistors is connected to the flip flop circuit. Each of the field effect transistors constituting the flip flop circuit retains its channel formation state because of a residual polarization in the ferroelectric gate film. Thus, when power goes OFF, the flip flop circuit retains its state just before power goes OFF. In this way, data can be stored on a nonvolatile basis, and stored data can be read without destroying the data. Additionally, no refreshing is needed, and therefore, a power demand in standby is reduced.

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patent: 4095281 (1978-06-01), Denes
patent: 4132904 (1979-01-01), Harari
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patent: 4873664 (1989-10-01), Eaton, Jr.
patent: 4888630 (1989-12-01), Paterson
patent: 5057898 (1991-10-01), Adan et al.

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