Nonvolatile memory device having a program-assist plate

Static information storage and retrieval – Floating gate – Particular connection

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Details

36518514, 36518515, 257319, 257320, G11C 1604, H01L 29788

Patent

active

058779809

ABSTRACT:
A nonvolatile memory device in which an electrically conductive "program assist plate" is formed over the nonvolatile memory cells. Appropriate voltages are applied to the program assist plate to greatly increase the cell coupling ratio, thereby reducing the program and erase voltages, and increasing the speed of operation. The manufacturing process is simple, and it results in a more planar structure which facilitates subsequent manufacturing processes.

REFERENCES:
patent: 5295096 (1994-03-01), Nakajima
patent: 5338956 (1994-08-01), Nakamura
patent: 5671176 (1997-09-01), Jang
patent: 5677556 (1997-10-01), Endoh

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