Nonvolatile memory device for storing multi-bit data

Details Nonvolatile memory device for storing multi-bit data Nonvolatile memory device for storing multi-bit data

2006-06-06

2006-06-06

Pham, Hoai (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S316000, C257S317000

Reexamination Certificate

active

07057229

ABSTRACT:
A semiconductor nonvolatile memory device for storing multi-bit data has a memory cell having a source region S and a drain region D formed at the surface of a semiconductor substrate, a gate insulator film and a control gate CG formed on a channel region CH between the source region S and the drain region D and a nonconductive trap gate in the gate insulator film. An indentation4is provided at the surface of the semiconductor substrate covering a region from a position in the vicinity of the drain region in the channel region to the drain region. By providing the indentation4on the drain region side of the channel region, the trap gate is positioned in the direction of a channel current flowing from the source region S to the drain region D. Then, the a charge having run through the channel region CH is injected efficiently into the trap gate on the indentation.

REFERENCES:
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Y. Hayashi et al., “Twin MONOS Cell with Dual Control Gates”, 2000 IEEE, 2000 Symposium on VLSI Technology Digest of Technical Papers, pp. 122-123.

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