Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-09-18
2007-09-18
Phung, Anh (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185180, C365S185210, C365S185290
Reexamination Certificate
active
11194945
ABSTRACT:
A non-volatile memory device capable of improving a read characteristic includes memory blocks, each memory block having a plurality of word lines. A common source line is arranged to be shared by the memory blocks. A first transistor is connected to the common source line, and a voltage higher than a power supply voltage is applied to a gate of the first transistor during a read operation. A second transistor connects the first transistor to a reference voltage during the read operation.
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English language abstract of the Korean Publication No. 2003-0087674.
English language abstract of the Korean Publication No. 2001-143489.
English language abstract of the Korean Publication No. 2003-257193.
Kang Sang-Chul
Lee Jin-Yub
Bernstein Allison P.
Marger & Johnson & McCollom, P.C.
Phung Anh
Samsung Electronics Co,. Ltd.
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