Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2011-05-03
2011-05-03
Lee, Eugene (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S002000, C257S004000, C257S350000, C257S358000, C257S529000, C257SE21665, C257SE27004, C257SE27005
Reexamination Certificate
active
07935953
ABSTRACT:
A nonvolatile memory device including a lower electrode, a resistor structure disposed on the lower electrode, a middle electrode disposed on the resistor structure, a diode structure disposed on the middle electrode, and an upper electrode disposed on the diode structure. A nonvolatile memory device wherein the resistor structure includes one resistor and the diode structure includes one diode. An array of nonvolatile memory device as described above. Methods of manufacturing a nonvolatile memory device and an array of nonvolatile memory device.
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Ahn Seung-eon
Cha Young-kwan
Joung Young-Soo
Lee Myoung-jae
Seo David
Harness & Dickey & Pierce P.L.C.
Lee Eugene
Samsung Electronics Co,. Ltd.
Spalla David
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