Nonvolatile memory device, array of nonvolatile memory...

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material

Reexamination Certificate

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Details

C257S002000, C257S004000, C257S350000, C257S358000, C257S529000, C257SE21665, C257SE27004, C257SE27005

Reexamination Certificate

active

07935953

ABSTRACT:
A nonvolatile memory device including a lower electrode, a resistor structure disposed on the lower electrode, a middle electrode disposed on the resistor structure, a diode structure disposed on the middle electrode, and an upper electrode disposed on the diode structure. A nonvolatile memory device wherein the resistor structure includes one resistor and the diode structure includes one diode. An array of nonvolatile memory device as described above. Methods of manufacturing a nonvolatile memory device and an array of nonvolatile memory device.

REFERENCES:
patent: 3705419 (1972-12-01), Bleher et al.
patent: 3796926 (1974-03-01), Cole et al.
patent: 5640343 (1997-06-01), Gallagher et al.
patent: 6194746 (2001-02-01), Gonzalez et al.
patent: 6316965 (2001-11-01), Jonker et al.
patent: 6627100 (2003-09-01), Ando et al.
patent: 6773977 (2004-08-01), Reynes et al.
patent: 6849564 (2005-02-01), Hsu et al.
patent: 6850432 (2005-02-01), Lu et al.
patent: 6864522 (2005-03-01), Krieger et al.
patent: 7009694 (2006-03-01), Hart et al.
patent: 7053406 (2006-05-01), Ho et al.
patent: 7602042 (2009-10-01), Ahn et al.
patent: 2003/0179633 (2003-09-01), Krieger et al.
patent: 2003/0189851 (2003-10-01), Brandenberger et al.
patent: 2004/0159835 (2004-08-01), Krieger et al.
patent: 2004/0202041 (2004-10-01), Hidenori
patent: 2005/0170971 (2005-08-01), Yata et al.
patent: 2006/0034116 (2006-02-01), Lam et al.
patent: 2007/0069192 (2007-03-01), Odagawa et al.
patent: 0 666 593 (1995-02-01), None
patent: 1 484 799 (2004-12-01), None
patent: WO 00/63981 (2000-10-01), None
patent: WO 02/095832 (2002-11-01), None
Aoki, Toru; Hatanaka, Yoshinori; and Look, David C.; “ZnO diode fabricated by eximer laser doping,” Applied Physics Letters, vol. 76, No. 22, May 29, 2000.
European Search Report dated Nov. 6, 2008.
Chinese Office Action dated Dec. 26, 2008.
Office Action and English Translation Thereof Issued in Corresponding Korean Application No. 10-2004-0091497 Dated Mar. 28, 2006.
EAST Search History Issued with the Office Action dated Apr. 20, 2007 for parent application.
EAST Search History Issued with the Office Action dated Nov. 1, 2006 for parent application.

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