Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-03-09
2009-06-23
Nguyen, Van Thu (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185170, C365S185230
Reexamination Certificate
active
07551487
ABSTRACT:
In a nonvolatile memory device, a first verification result indicates whether a block of memory cells has been successfully programmed and a second verification result indicates whether a far cell in the block has been is successfully programmed. A controller defines the level and application time for the program voltage applied during a next program loop in response to the first and second verification results.
REFERENCES:
patent: 6954380 (2005-10-01), Ono et al.
patent: 7110286 (2006-09-01), Choi et al.
patent: 7184356 (2007-02-01), Noguchi et al.
patent: 2004/0062078 (2004-04-01), Kasa et al.
patent: 2005/0190602 (2005-09-01), Nakamura et al.
patent: 2003-249082 (2003-09-01), None
patent: 2004-046996 (2004-02-01), None
patent: 2004-110871 (2004-04-01), None
patent: 1020030051402 (2003-06-01), None
patent: 1020040024450 (2004-03-01), None
Jo Sung-Jyu
Park Min-Gun
Nguyen Van Thu
Samsung Electronics Co,. Ltd.
Volentine & Whitt PLLC
Yang Han
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