Nonvolatile memory device and read method thereof

Details Nonvolatile memory device and read method thereof Nonvolatile memory device and read method thereof

2009-03-03

2010-11-30

Dinh, Son (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S189090, C365S189011

Reexamination Certificate

active

07843736

ABSTRACT:
Disclosed is a read method of a non-volatile memory device which includes performing a first read operation in which a first read voltage is applied to a selected word line. If a read fail arises at the first read operation, a second read operation is performed in which a second read voltage lower than the first read voltage is applied to the selected word line. If no read fail arises at the second read operation, the read fail generated at the first read operation is cured by performing a program operation.

REFERENCES:
patent: 7518913 (2009-04-01), Wang et al.
patent: 2004/0080979 (2004-04-01), Park
patent: 2001-167588 (2001-06-01), None
patent: 1020050098838 (2005-10-01), None
patent: 1020060021097 (2006-03-01), None
English Abstract for Publication No.: 2001-167588.
English Abstract for Publication No.: 1020050098838.
English Abstract for Publication No.: 1020060021097.

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