Nonvolatile memory device and programming method

Details Nonvolatile memory device and programming method Nonvolatile memory device and programming method

2011-06-14

2011-06-14

Pham, Ly D (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185110, C365S185170, C365S185280, C365S191000, C365S196000, C365S203000

Reexamination Certificate

active

07961523

ABSTRACT:
Disclosed is a programming method for a nonvolatile memory device. The method includes; charging word-line signal lines to a pass voltage during a pass voltage charge operation, simultaneously executing an initial precharge operation for strings including program-inhibited cells during the pass voltage charge operation, and applying the pass voltage to word lines from the word-line signal lines in response to a block-selection enabling signal.

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