Nonvolatile memory device and program method with improved...

Details Nonvolatile memory device and program method with improved... Nonvolatile memory device and program method with improved...

2009-07-27

2011-10-25

Pham, Ly D (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185170, C365S185180, C365S185280

Reexamination Certificate

active

08045387

ABSTRACT:
A flash memory and programming method are disclosed. The flash memory includes a memory cell array having memory cells arranged in a plurality of word lines including a selected word line and a plurality of non-selected word lines and a plurality of bit lines, a high voltage generator generating a program voltage applied to the selected word line, and a pass voltage applied to at least one of the non-selected word lines adjacent to the selected word line, and control logic controlling the generation of the program voltage, such that the program voltage is incrementally increased during a program operation, and generation of the pass voltage, such that the program voltage is incrementally increased.

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