Nonvolatile memory device and process for production of the same

Details Nonvolatile memory device and process for production of the same Nonvolatile memory device and process for production of the same

1996-07-10

1997-03-25

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257324, 257406, 257410, H01L 29792, H01L 2976, H01L 2994

Patent

active

056147481

ABSTRACT:
A nonvolatile memory device having a control gate laid over a floating gate via an interlayer insulating layer, wherein the side portions of the floating gate and the control gate have a side wall insulating film doped with phosphorus, whereby the retention of the charges stored at the floating gate is improved, and a process for production of a nonvolatile memory device comprising forming a gate insulating film, a floating gate, an interlayer insulating layer, and a control gate on a semiconductor substrate, then forming a side wall insulating film doped with phosphorus on the semiconductor substrate by chemical vapor deposition and anisotropically etching the side wall insulating layer so as to form a side wall insulating film doped with phosphorus at the side portions of the floating gate and the control gate.

REFERENCES:
patent: 5068697 (1991-11-01), Noda et al.

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