Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2006-11-29
2009-02-24
Mai, Son L (Department: 2827)
Static information storage and retrieval
Floating gate
Particular connection
C365S185160, C365S185180
Reexamination Certificate
active
07495959
ABSTRACT:
A nonvolatile memory device includes a memory cell array and a voltage controller. The memory cell array includes a plurality of memory blocks each including a plurality of cell strings, where each of the cell strings includes a first selection transistor, a second selection transistor, and at least one memory cell transistor connected in series between the first and second selection transistors. The voltage controller applies a first selection voltage to first selection lines connected to the first selection transistors, a second selection voltage to second selection lines connected to the second selection transistors, and a word line voltage to word lines connected to the memory cell transistors, in response to a plurality of block selection signals corresponding to the memory blocks. The voltage controller precharges the second selection lines to a precharge voltage by applying the second selection line voltage to the second selection lines in a standby state, where the second selection line voltage is equal to the precharge voltage.
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Mai Son L
Samsung Electronics Co,. Ltd.
Volentine & Whitt PLLC
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