Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-07-17
2007-07-17
Tran, Michael (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185180
Reexamination Certificate
active
11106640
ABSTRACT:
A nonvolatile memory device and method of programming the device are disclosed. The nonvolatile memory device is adapted to interrupt or resume a programming operation for a memory cell of the device in response to variation in a programming voltage being supplied to the memory cell. The programming operation is typically interrupted or resumed in response to signals generated by a program controller and/or a detector monitoring the programming voltage.
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Samsung Electronics Co,. Ltd.
Tran Michael
Volentine & Whitt PLLC
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