Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2008-01-29
2010-10-12
Yoha, Connie C (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185330, C365S185110, C365S185220
Reexamination Certificate
active
07813185
ABSTRACT:
Provided is a method of reliably operating a highly integratable nonvolatile memory device. The nonvolatile memory device may include a string selection transistor, a plurality of memory transistors, and a ground selection transistor between a bit line and a common source line. In the nonvolatile memory device, data may be erased from the memory transistors by applying an erasing voltage to the bit line or the common source line.
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patent: 6903981 (2005-06-01), Futatsuyama et al.
patent: 6967874 (2005-11-01), Hosono
patent: 6975543 (2005-12-01), Kurihara
patent: 7035147 (2006-04-01), Yeh et al.
patent: 2006/0249779 (2006-11-01), Choi et al.
Hong Ki-ha
Hyun Jae-woong
Jin Young-gu
Kim Jong-seob
Lee Sung-hoon
Harness & Dickey & Pierce P.L.C.
Samsung Electronics Co,. Ltd.
Yoha Connie C
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