Nonvolatile memory device and method of manufacturing same

Details Nonvolatile memory device and method of manufacturing same Nonvolatile memory device and method of manufacturing same

1996-12-16

1998-09-29

Monin, Donald

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257317, 257322, H01L 2968

Patent

active

058148558

ABSTRACT:
In a flash type EEPROM device, when a dose amount of an impurity of a floating gate is controlled, or, a channel of a transistor is buried by an ion implantation, the threshold value at no charges accumulated is set between the threshold at writing and the threshold at erasure, to reduce the disturbances of a drain and a gate when reading.

REFERENCES:
patent: 4282446 (1981-08-01), McElroy
patent: 5424567 (1995-06-01), Chen
patent: 5479368 (1995-12-01), Keshtbod

Affiliated with

Also associated with

Rating

Nonvolatile memory device and method of manufacturing same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile memory device and method of manufacturing same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile memory device and method of manufacturing same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-688043