Nonvolatile memory device and method of fabricating the same

Details Nonvolatile memory device and method of fabricating the same Nonvolatile memory device and method of fabricating the same

2011-06-07

2011-06-07

Smith, Matthew S (Department: 2823)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Plural fluid growth steps with intervening diverse operation

C438S426000, C257SE21540, C257SE21645, C257SE21660

Reexamination Certificate

active

07955960

ABSTRACT:
A nonvolatile memory device and a method of fabricating the same is provided to prevent charges stored in a charge trap layer from moving to neighboring memory cells. The method of fabricating a nonvolatile memory device, includes forming a first dielectric layer on a semiconductor substrate in which active regions are defined by isolation layers, forming a charge trap layer on the first dielectric layer, removing the first dielectric layer and the charge trap layer over the isolation layers, forming a second dielectric layer on the isolation layers including the charge trap layer, and forming a conductive layer on the second dielectric layer.

REFERENCES:
patent: 5930645 (1999-07-01), Lyons et al.
patent: 6063666 (2000-05-01), Chang et al.
patent: 6215702 (2001-04-01), Derhacobian et al.
patent: 6404020 (2002-06-01), Kim
patent: 6417053 (2002-07-01), Kuo
patent: 6867463 (2005-03-01), Chang
patent: 2003/0119256 (2003-06-01), Dong et al.
patent: 2003/0122204 (2003-07-01), Nomoto et al.
patent: 2005/0093047 (2005-05-01), Goda et al.
patent: 2006/0134845 (2006-06-01), Pham et al.
patent: 2006/0148199 (2006-07-01), Kim
patent: 2000-306989 (2000-11-01), None
patent: 1020020048261 (2002-06-01), None
patent: 1020020073960 (2002-09-01), None
patent: 1020030008990 (2003-01-01), None
patent: 10-2005-0066879 (2005-06-01), None
patent: 1020060083509 (2006-07-01), None
patent: 1020060135221 (2006-12-01), None
patent: 1020070002744 (2007-01-01), None
patent: 100771808 (2007-10-01), None
Office Action dated Nov. 27, 2009, for Korean application No. 10-2007-0063605.
Korean Notice of Allowance for Korean application No. 10-2007-0028001, Date: May 31, 2010.
Korean Notice of Allowance for Korean application No. 10-2007-0063605, Date May 31, 2010.
Korean Office Action for Korean application No. 10-2007-0091555, Date May 26, 2010.

Affiliated with

Also associated with

Rating

Nonvolatile memory device and method of fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile memory device and method of fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile memory device and method of fabricating the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2663845