Nonvolatile memory device and method for manufacturing the same

Details Nonvolatile memory device and method for manufacturing the same Nonvolatile memory device and method for manufacturing the same

2011-08-02

2011-08-02

Sandvik, Benjamin P (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29300

Reexamination Certificate

active

07989874

ABSTRACT:
The present invention discloses a nonvolatile memory device which can improve the data storage capacity without increasing the surface area of the device, and a method for manufacturing the same. The nonvolatile memory device comprises: a gate of a stack type structure formed on an active region of a semiconductor substrate; a source/drain formed in the substrate at both sides of the gate of the stack type structure; an interlayer insulating film formed on the substrate where the source/drain is formed and covering the gate of the stack type structure; a contact connected to the source/drain through the interlayer insulating film; a plurality of conductive patterns formed in the interlayer insulating film of the region not adjacent to the contact; and an electrode pad formed on the conductive patterns.

REFERENCES:
patent: 5517044 (1996-05-01), Koyama
patent: 5990507 (1999-11-01), Mochizuki et al.
patent: 6020229 (2000-02-01), Yamane et al.
patent: 6078521 (2000-06-01), Madurawe et al.
patent: 6380585 (2002-04-01), Odanaka et al.
patent: 6420749 (2002-07-01), Divakaruni et al.
patent: 6627943 (2003-09-01), Shin et al.
patent: 6667211 (2003-12-01), Watanabe
patent: 7436703 (2008-10-01), Pham et al.
patent: 2003/0089961 (2003-05-01), Vollrath et al.
patent: 2003/0127681 (2003-07-01), Nishioka et al.
patent: 2003/0148558 (2003-08-01), Kubo et al.

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