Nonvolatile memory device and method for fabricating the same

Details Nonvolatile memory device and method for fabricating the same Nonvolatile memory device and method for fabricating the same

2008-10-22

2009-12-29

Tran, Long K (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257S316000, C257S317000, C257SE29129, C257SE29300

Reexamination Certificate

active

07638833

ABSTRACT:
A nonvolatile memory device including a floating gate formed on a tunnel oxide layer that is formed on a semiconductor substrate. The device also includes a drain region formed in the substrate adjacent to one side of the floating gate, a source region formed in the substrate adjacent to another side of the floating gate, where the source region is apart from the floating gate, and an inter-gate insulating layer formed on a portion of an active region between the source region and the floating gate and on a sidewall of the floating gate directing toward the source region, as well as on a sidewall of the floating gate directing toward the drain region. The device includes a word line formed over the floating gate and being across the substrate in one direction, and a field oxide layer interposing between the word line and the source region and between the word line and the drain region, and intersecting the word line.

REFERENCES:
patent: 4855800 (1989-08-01), Esquivel et al.
patent: 4881108 (1989-11-01), Yoshikawa
patent: 2002/0045304 (2002-04-01), Lee
patent: 2006/0145192 (2006-07-01), Van Duuren et al.

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