Nonvolatile memory device and method for fabricating the same

Details Nonvolatile memory device and method for fabricating the same Nonvolatile memory device and method for fabricating the same

2006-10-10

2006-10-10

Tran, Thien F. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S317000, C257S321000, C257S324000

Reexamination Certificate

active

07119394

ABSTRACT:
A structure of non-volatile memory has a plurality of buried bit lines in a substrate, extending along a first direction. Selection gate structure lines are located between the buried bit lines. A plurality of stack dielectric films on the both sides of the selection gate structure lines serving as a charge storage region, does not extend to the bit lines and a dielectric layer contacting a surface of substrate adjacent to stacked dielectric films. Word lines are over the substrate, wherein stacked dielectric films and a dielectric layer are interposed between WL and substrate on the region excluding the selection gate structure line, extending along a second direction different from the first direction. Since the charge storage layer does not completely cover between the selection gate structure lines and the bit lines, an additional control gate is formed.

REFERENCES:
patent: 6987298 (2006-01-01), Lee et al.

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