Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
Reexamination Certificate
2009-09-25
2010-10-12
Mandala, Victor A (Department: 2826)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
C257S001000, C257S002000, C257S003000, C257S004000, C257S005000, C257SE21002, C257SE29002
Reexamination Certificate
active
07811905
ABSTRACT:
A nonvolatile memory device and a method for its fabrication may ensure uniform operating characteristics of ReRAM. The ReRam may include a laminated resistance layer that determines phase of ReRAM on an upper edge of a lower electrode for obtaining a stable threshold drive voltage level.
REFERENCES:
patent: 6611039 (2003-08-01), Anthony
patent: 6943365 (2005-09-01), Lowrey et al.
patent: 7339185 (2008-03-01), Song et al.
patent: 7397688 (2008-07-01), Tajiri
patent: 7511294 (2009-03-01), Ufert
patent: 2004/0145850 (2004-07-01), Fukumoto et al.
patent: 2005/0212024 (2005-09-01), Happ
patent: 2007/0051936 (2007-03-01), Pellizzer et al.
patent: 2007/0076486 (2007-04-01), Jeong et al.
patent: 2007/0279974 (2007-12-01), Dennison et al.
patent: 2007/0295948 (2007-12-01), Lam et al.
patent: 2006-203098 (2006-08-01), None
patent: 10-2005-0105297 (2005-11-01), None
patent: 10-2006-0070694 (2006-06-01), None
patent: 10-2005-0084319 (2005-08-01), None
patent: 10-2006-0128636 (2006-12-01), None
Hynix / Semiconductor Inc.
Mandala Victor A
Marshall & Gerstein & Borun LLP
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