Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-05-06
1999-01-12
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257314, 257321, 257324, H01L 2976, H01L 29788
Patent
active
058594540
ABSTRACT:
A nonvolatile memory device includes a floating gate for storing a charge carrier during programming, a program gate coupled to the floating gate and performing programming by injecting the charge carrier induced from the outside during programming into the floating gate, an erasure gate coupled to the floating gate and emitting the charge carrier stored in the floating gate to the outside during erasure to outside, a control gate coupled to the floating gate and controlling an amount of the charge carrier provided from the program gate to the floating gate during programming, and a transistor coupled to the floating gate and verifying the amount of the charge carrier provided form the program gate during programming, the transistor including a channel region and source and drain regions.
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patent: 5587332 (1996-12-01), Chang et al.
patent: 5637897 (1997-06-01), Oyama
patent: 5644528 (1997-07-01), Kojima
Choi Woong Lim
Ra Kyeong Man
LG Semicon Co. Ltd.
Nguyen Cuong Quang
Thomas Tom
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