Nonvolatile memory device

Static information storage and retrieval – Systems using particular element – Resistive

Reexamination Certificate

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Details

C365S100000, C365S104000

Reexamination Certificate

active

10546216

ABSTRACT:
Provided is a nonvolatile memory device including: a storage element; a switching element electrically connected to the storage element; and a plurality of lead wirings electrically connected to the switching element, all of which are arranged on a substrate having an insulating surface, wherein the switching element includes an organic semiconductor, and the storage element contains a dielectric material and stores information by selecting at least two states including a high impedance state and a low impedance state.

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M. Mushrush, et al., “Easily Processable Phenylene-Thiophene-Based Organic Field-Effect Transistors and Solution-Fabricated Nonvolatile Transistor Memory Elements”, Journal Of American Chemical Society, 2003, vol. 125, pp. 9414-9423.

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