Nonvolatile memory cell, storage device and nonvolatile...

Static information storage and retrieval – Systems using particular element – Resistive

Reexamination Certificate

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C365S154000, C365S163000, C365S158000, C365S171000

Reexamination Certificate

active

07599210

ABSTRACT:
One or serially connected field effect transistors are cross coupled with each other, first terminals of nonvolatile variable resistance elements are connected to their storage nodes, and the other terminals of the variable resistance elements are connected to a power supply line to thereby form a memory cell. By controlling the voltage supplied to this power supply line, data of the memory cell immediately before turning off the power is stored in it when the power is turned off.

REFERENCES:
patent: 5159571 (1992-10-01), Ito et al.
patent: 5355331 (1994-10-01), Takase et al.
patent: 7436694 (2008-10-01), Berthold et al.
patent: 2005/0128791 (2005-06-01), Kang
patent: 2005/0162896 (2005-07-01), Jung
patent: 2005/0190597 (2005-09-01), Kato
patent: 2005/0195664 (2005-09-01), Ooishi
patent: 2003-233990 (2003-08-01), None

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