Nonvolatile memory cell, nonvolatile memory device, and...

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S185180

Reexamination Certificate

active

07864595

ABSTRACT:
A method of programming a nonvolatile memory device. The method may include pre-programming one memory cell among a plurality of memory cells by storing data in a first data storage layer using a first program voltage applied to one word line corresponding to the one memory cell among the plurality of memory cells; and while pre-programming other memory cells among the plurality of memory cells, background-programming the pre-programmed memory cell by moving the stored data to a second data storage layer using a second program voltage that is higher than the first program voltage applied to the word line of the pre-programmed memory cell.

REFERENCES:
patent: 6741502 (2004-05-01), Cernea
patent: 7502260 (2009-03-01), Li
patent: 2006/0041711 (2006-02-01), Miura et al.
patent: 05-299616 (1993-12-01), None
patent: 2004-102781 (2004-04-01), None
patent: 2003-0081131 (2003-10-01), None
English language abstract of Japanese Publication No. 05-299616.
English language abstract of Japanese Publication No. 2004-102781.
English language abstract of Korean Publication No. 2003-0081131.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Nonvolatile memory cell, nonvolatile memory device, and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile memory cell, nonvolatile memory device, and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile memory cell, nonvolatile memory device, and... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2685340

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.