Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2011-01-04
2011-01-04
Phung, Anh (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185180
Reexamination Certificate
active
07864595
ABSTRACT:
A method of programming a nonvolatile memory device. The method may include pre-programming one memory cell among a plurality of memory cells by storing data in a first data storage layer using a first program voltage applied to one word line corresponding to the one memory cell among the plurality of memory cells; and while pre-programming other memory cells among the plurality of memory cells, background-programming the pre-programmed memory cell by moving the stored data to a second data storage layer using a second program voltage that is higher than the first program voltage applied to the word line of the pre-programmed memory cell.
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English language abstract of Japanese Publication No. 05-299616.
English language abstract of Japanese Publication No. 2004-102781.
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Muir Patent Consulting, PLLC
Phung Anh
Samsung Electronics Co,. Ltd.
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