Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2005-08-30
2005-08-30
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S097000, C365S100000
Reexamination Certificate
active
06937505
ABSTRACT:
It is an object of the present invention to make it possible to decrease the on-state resistance of a selection transistor of a memory cell without increasing the whole area of a memory cell array and accelerate and stabilize the reading operation of data stored in the memory cell. Therefore, a plurality of variable resistive elements capable of storing information in accordance with a change of electrical resistances is included, one ends of the variable resistive elements are connected each other, and an electrode of a selection element constituted by a MOSFET or diode element for selecting the variable resistive elements in common is connected with one end of each of the variable resistive elements to constitute a memory cell.
REFERENCES:
patent: 4751677 (1988-06-01), Daughton et al.
patent: 6169688 (2001-01-01), Noguchi
patent: 2002/0136053 (2002-09-01), Asano et al.
patent: 2004/0037106 (2004-02-01), Lu et al.
patent: 1 109 170 (2001-06-01), None
patent: 2002-151661 (2002-05-01), None
European Partial Search Report mailed Jun. 9, 2004 for European patent application No. EP 03 25 7635, 3 pages.
Hoang Huan
Morrison & Foerster / LLP
Sharp Kabushiki Kaisha
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