Nonvolatile memory cell

Details Nonvolatile memory cell Nonvolatile memory cell

2006-05-31

2008-10-14

Elms, Richard T. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Resistive

C365S100000, C365S154000

Reexamination Certificate

active

07436694

ABSTRACT:
Nonvolatile memory cell, having a first resistor that is electrically programmable in a nonvolatile fashion, a second resistor that is electrically programmable in a nonvolatile fashion, a first leakage current reducing element connected between the first resistor and an operating potential, and a second leakage current reducing element connected between the second resistor and the operating potential.

REFERENCES:
patent: 5020029 (1991-05-01), Ichinose et al.
patent: 5057893 (1991-10-01), Sheng et al.
patent: 5132929 (1992-07-01), Ochii
patent: 5377140 (1994-12-01), Usuki
patent: 5761113 (1998-06-01), Natsume et al.
patent: 5852573 (1998-12-01), Yang et al.
patent: 6038163 (2000-03-01), Clemens et al.
patent: 6853579 (2005-02-01), Chou
patent: 6934181 (2005-08-01), Chu et al.
patent: 7262639 (2007-08-01), Mulder et al.
patent: 2004/0125643 (2004-07-01), Kang et al.
patent: 2004/0125644 (2004-07-01), Komatsuzaki
patent: 2004/0141363 (2004-07-01), Ohtsuka et al.

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