Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2005-06-07
2005-06-07
Auduong, Gene N. (Department: 2827)
Static information storage and retrieval
Floating gate
Multiple values
C365S185280, C365S185290
Reexamination Certificate
active
06903968
ABSTRACT:
A nonvolatile memory capable of storing multi-bits binary information is provided. The memory includes an oxide formed on a substrate. A control gate is formed on the oxide. An L-shape structure is attached on sidewall of the control gate. Spacers are formed on the L-shape structure to act as a floating gate. A first doped region and a second doped region is formed in the substrate adjacent to the spacers with a channel between the two doped regions. Wherein the spacer represent a first binary status by injecting and storing electrical charges in the spacers. Or to represent a second binary status by not injecting electrical charges into the spacer.
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Applied Intellectual Properties Co., Ltd.
Auduong Gene N.
Perkins Coie LLP
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