Static information storage and retrieval – Systems using particular element – Ferroelectric
Patent
1996-09-10
1999-03-02
Zarabia, A.
Static information storage and retrieval
Systems using particular element
Ferroelectric
36518501, G11C 1140
Patent
active
058779779
ABSTRACT:
A new ferroelectric memory element is disclosed. The ferroelectric material exhibits little polarization fatigue up to 10.sup.12 switching cycles, long retention and minimal tendency to imprint, producing a nonvolatile, nondestructive readout memory element having low saturation voltage for switching. The memory element can be manufactured using conventional CMOS transistor technology and may include a SrBi.sub.2 Ta.sub.2 O.sub.9 ferroelectric thin-film between metallic electrodes, and an oxide, optionally, conventional SiN.sub.x O.sub.y layer or Si.sub.3 N.sub.4 --SiO.sub.2 bilayer, to protect the substrate from contaminant migration from the ferroelectric layer. Platinum or a metal oxide material (e.g., RuO.sub.2, IrO.sub.2, La.sub.x Sr.sub.1-x CoO.sub.3) may serve as electrodes and provide a lattice matching material for the ferroelectric layer overlying the bottom electrode. Formation of SrBi.sub.2 Ta.sub.2 O.sub.9 or other ferroelectric member of the layered perovskite family may be integrated into conventional CMOS transistor processing.
REFERENCES:
patent: 4888630 (1989-12-01), Patterson
patent: 5046043 (1991-09-01), Miller et al.
patent: 5218512 (1993-06-01), Nakamura
patent: 5300799 (1994-04-01), Nakamura et al.
patent: 5309392 (1994-05-01), Ootsuka et al.
patent: 5345415 (1994-09-01), Nakao et al.
patent: 5361224 (1994-11-01), Takasu
patent: 5495117 (1996-02-01), Larson
patent: 5515311 (1996-05-01), Mihara
patent: 5523964 (1996-06-01), McMillan et al.
patent: 5559733 (1996-09-01), McMillan et al.
patent: 5592409 (1997-01-01), Nishimura et al.
Y. Fujimori, N. Izumi, Takashi Nakamura, A. Kamisawa & Y. Shigematsu, Development of Low Dielectric Constant Ferroelectric Materials for the Ferroelectric Memory Field Effect Transistor, Jpn. J. Appl. Phys., vol. 36 (1997) Pt. 1, No. 9B, pp. 5935-5938.
E. Tokumitsu, T. Shimamura & H. Ishiwara, Electrical Properties of Ferroelectric-Capacitor-Gate Si MOS Transistors Using P (L) 2T ZT Films, Integrated Ferrelectrics, 1997, vol. 15, pp. 137-144.
R.E. Jones, Jr., et al., "Ferroelectric non-volatile memories for low-voltage, low-power applications", Thin Solid Films 270 (1995), pp. 584-588.
J.F. Scott et al., "Ferroelectric Memories", Science (1989), vol. 246, pp. 1400-1405.
S. Matsubara et al., "Preparation of epitaxial ABO.sub.3 perovskite-type oxide thin films on a (100)MgAl.sub.2 O.sub.4 /Si substrate", J.Appl. Phys. 66(12), Dec. 15, 1989, pp. 5826-5832.
S. Shinharoy et al., "BaMgF.sub.4 Thin Film Development and Processing for Ferroelectric Fets", Integrated Ferroelectrics, 1993, vol. 3, pp. 217-223.
Shu-Yau Wu, "A New Ferroelectric Memory Device, Metal-Ferroelectric-Semiconductor Transistor", IEEE Transactions on Electron Devices, vol. Ed-21, No. 8, Aug. 1974, pp. 499-504.
Yoshio Okada et al., "Relationship between growth conditions, nitrogen profile, and charge to breakdown of gate oxynitrides grown from pure N.sub.2 O", Appl. Phys. Lett. vol. 63 No. 2, Jul. 12, 1993, pp. 194-196.
Kazushi Amanuma et al., "Preparation and ferroelectric properties of SrBi.sub.2 Ta.sub.2 O.sub.9 thin films", Appl. Phys. Lett. vol. 66, No. 2, Jan. 9, 1995, pp. 221-223.
National Semiconductor Corporation
Zarabia A.
LandOfFree
Nonvolatile memory based on metal-ferroelectric-metal-insulator does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nonvolatile memory based on metal-ferroelectric-metal-insulator , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile memory based on metal-ferroelectric-metal-insulator will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-428773