Nonvolatile memory apparatus

Static information storage and retrieval – Systems using particular element – Resistive

Reexamination Certificate

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Details

C365S189040, C365S158000, C365S163000, C365S171000, C365S173000

Reexamination Certificate

active

07911824

ABSTRACT:
Provided are a plurality of memory cell arrays136and146each having a plurality of nonvolatile memory elements having a characteristic whose resistance value changes according to electric pulses applied, and control units (102, 104, 108, 110, 114, 128, 130, 152) configured to write data to a memory cell array and to read data from another memory cell array such that writing of the data and reading of the data occur concurrently in writing of the data to the plurality of memory cell arrays.

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Baek, I.G. et al., “Highly Scalable Non-volatile Resistive Memory using Simple Binary Oxide Driven by Asymmetric Unipolar Voltage Pulses,” Samsung Advanced Institute of Technology, 2004 IEEE.

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