Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2011-03-22
2011-03-22
Le, Vu A (Department: 2824)
Static information storage and retrieval
Systems using particular element
Resistive
C365S189040, C365S158000, C365S163000, C365S171000, C365S173000
Reexamination Certificate
active
07911824
ABSTRACT:
Provided are a plurality of memory cell arrays136and146each having a plurality of nonvolatile memory elements having a characteristic whose resistance value changes according to electric pulses applied, and control units (102, 104, 108, 110, 114, 128, 130, 152) configured to write data to a memory cell array and to read data from another memory cell array such that writing of the data and reading of the data occur concurrently in writing of the data to the plurality of memory cell arrays.
REFERENCES:
patent: 7095644 (2006-08-01), Chevallier et al.
patent: 2004/0037110 (2004-02-01), Ooishi
patent: 2004/0042292 (2004-03-01), Sakata et al.
patent: 2005/0237820 (2005-10-01), Takemura et al.
patent: 2006/0126380 (2006-06-01), Osada et al.
patent: 2006/0158919 (2006-07-01), Inaba
patent: 2008/0151656 (2008-06-01), Nakai
patent: 2004-086986 (2004-03-01), None
patent: 2004-185756 (2004-07-01), None
patent: 2004-234707 (2004-08-01), None
patent: 2005-108395 (2005-04-01), None
patent: 2006-031795 (2006-02-01), None
patent: 2006-134398 (2006-05-01), None
patent: 2006-155700 (2006-06-01), None
patent: 2006-164511 (2006-06-01), None
patent: 2006-185577 (2006-07-01), None
patent: 2007-226884 (2007-09-01), None
Fujimoto, Masayuki et al., “High-Speed Resistive Switching of TiO2/TiN Nano-Crystalline Thin Film,” Japanese Journal of Applied Physics, vol. 45, No. 11, pp. L310-L312, 2006.
Baek, I.G. et al., “Highly Scalable Non-volatile Resistive Memory using Simple Binary Oxide Driven by Asymmetric Unipolar Voltage Pulses,” Samsung Advanced Institute of Technology, 2004 IEEE.
Kawai Ken
Shimakawa Kazuhiko
Le Vu A
McDermott Will & Emery LLP
Panasonic Corporation
Yang Han
LandOfFree
Nonvolatile memory apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nonvolatile memory apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile memory apparatus will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2712436