Nonvolatile memory and nonvolatile memory manufacturing method

Details Nonvolatile memory and nonvolatile memory manufacturing method Nonvolatile memory and nonvolatile memory manufacturing method

2006-06-20

2006-06-20

Dang, Trung (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S324000, C257S326000

Reexamination Certificate

active

07064382

ABSTRACT:
A nonvolatile memory device includes source and drain regions formed in a semiconductor substrate, and an insulating film formed on a channel region between the source region and the drain region in the semiconductor substrate. The nonvolatile memory device also includes a dielectric film formed above the channel region to store electric charge, and a control gate formed on the dielectric film. Compressive stress in the channel region is equal to or less than 50 MPa.

REFERENCES:
patent: 6977408 (2005-12-01), Lin et al.
patent: 2003/0181005 (2003-09-01), Hachimine et al.
patent: 2005/0051855 (2005-03-01), Kanegae et al.
patent: 8-31962 (1996-02-01), None

Affiliated with

Also associated with

Rating

Nonvolatile memory and nonvolatile memory manufacturing method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile memory and nonvolatile memory manufacturing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile memory and nonvolatile memory manufacturing method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3629750