Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-05-01
2008-05-06
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S257000, C257SE21179
Reexamination Certificate
active
07368338
ABSTRACT:
Memory elements, switching elements, and peripheral circuits to constitute a nonvolatile memory are integrally formed on a substrate by using TFTs. Since semiconductor active layers of memory element TFTs are thinner than those of other TFTs, impact ionization easily occurs in channel regions of the memory element TFTs. This enables low-voltage write/erase operations to be performed on the memory elements, and hence the memory elements are less prone to deteriorate. Therefore, a nonvolatile memory capable of miniaturization can be provided.
REFERENCES:
patent: 5308999 (1994-05-01), Gotou
patent: 5341012 (1994-08-01), Misawa et al.
patent: 5440158 (1995-08-01), Sung-Mu
patent: 5530266 (1996-06-01), Yonehara et al.
patent: 5541876 (1996-07-01), Hsue et al.
patent: 5543340 (1996-08-01), Lee
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5648277 (1997-07-01), Zhang et al.
patent: 5671026 (1997-09-01), Shiraki et al.
patent: 5818070 (1998-10-01), Yamazaki et al.
patent: 5827755 (1998-10-01), Yonehara et al.
patent: 5834797 (1998-11-01), Yamanaka
patent: 5895935 (1999-04-01), Yamazaki et al.
patent: 5923962 (1999-07-01), Ohtani et al.
patent: 5925906 (1999-07-01), Tanaka
patent: 5962896 (1999-10-01), Yabuta et al.
patent: 5994717 (1999-11-01), Igarashi et al.
patent: 6013928 (2000-01-01), Yamazaki et al.
patent: 6017794 (2000-01-01), Burns et al.
patent: 6054734 (2000-04-01), Aozasa et al.
patent: 6087679 (2000-07-01), Yamazaki et al.
patent: 6133967 (2000-10-01), Moon
patent: 6140667 (2000-10-01), Yamazaki et al.
patent: 6160271 (2000-12-01), Yamazaki et al.
patent: 6278131 (2001-08-01), Yamazaki et al.
patent: 6288412 (2001-09-01), Hamada et al.
patent: 6307214 (2001-10-01), Ohtani et al.
patent: 6448114 (2002-09-01), An et al.
patent: 6472684 (2002-10-01), Yamazaki et al.
patent: 6509602 (2003-01-01), Yamazaki et al.
patent: 7132335 (2006-11-01), Ilkbahar et al.
patent: 7141459 (2006-11-01), Yang et al.
patent: 0530972 (1993-03-01), None
patent: 02-011354 (1990-01-01), None
patent: 04-130668 (1992-05-01), None
patent: 04-279064 (1992-10-01), None
patent: 05-273591 (1993-10-01), None
patent: 05-275652 (1993-10-01), None
patent: 06-085258 (1994-03-01), None
patent: 06-125084 (1994-05-01), None
patent: 07-130652 (1995-05-01), None
patent: 07-135318 (1995-05-01), None
patent: 07-193246 (1995-07-01), None
patent: 07-321339 (1995-12-01), None
patent: 08-078329 (1996-03-01), None
patent: 08-172199 (1996-07-01), None
patent: 09-153559 (1997-06-01), None
patent: 11-284188 (1999-10-01), None
Specification and Drawings for U.S. Appl. No. 08/928,514, “A Method for Manufacturing a Semiconductor Device”.
Specification and Drawings for U.S. Appl. No. 09/084,738, “Semiconductor Thin Film and Semiconductor Device”.
Specification and Drawings for U.S. Appl. No. 09/645,329, “Semiconductor Thin Film and Semiconductor Device”.
Specification and Drawings for U.S. Appl. No. 09/592,936, “Semiconductor Thin Film and Semiconductor Device”.
R. Shimokawa et al., “Characterization of High-Efficiency Cst-Si Solar Cell Wafers by MBIC Measurement”, pp. 751-758, May 1988, Japanese Journal of Applied Physics, vol. 27, No. 5.
Hayashi Keisuke
Koyama Jun
Yamazaki Shunpei
Booth Richard A.
Costellia Jeffrey L.
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
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