Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-07-18
2006-07-18
Richards, N. Drew (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S057000, C257S059000, C257S314000, C257S315000, C257S316000, C257S317000, C257S344000, C257S345000, C257S346000, C257S763000, C438S209000, C438S211000, C438S257000, C438S266000
Reexamination Certificate
active
07078769
ABSTRACT:
Memory elements, switching elements, and peripheral circuits to constitute a nonvolatile memory are integrally formed on a substrate by using TFTs. Since semiconductor active layers of memory element TFTs are thinner than those of other TFTs, impact ionization easily occurs in channel regions of the memory element TFTs. This enables low-voltage write/erase operations to be performed on the memory elements, and hence the memory elements are less prone to deteriorate. Therefore, a nonvolatile memory capable of miniaturization can be provided.
REFERENCES:
patent: 5308999 (1994-05-01), Gotou
patent: 5341012 (1994-08-01), Misawa et al.
patent: 5440158 (1995-08-01), Sung-Mu
patent: 5541876 (1996-07-01), Hsue et al.
patent: 5543340 (1996-08-01), Lee
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5648277 (1997-07-01), Zhang et al.
patent: 5671026 (1997-09-01), Shiraki et al.
patent: 5818070 (1998-10-01), Yamazaki et al.
patent: 5834797 (1998-11-01), Yamanaka
patent: 5895935 (1999-04-01), Yamazaki et al.
patent: 5923962 (1999-07-01), Ohtani et al.
patent: 5925906 (1999-07-01), Tanaka
patent: 5962896 (1999-10-01), Yabuta et al.
patent: 5994717 (1999-11-01), Igarashi et al.
patent: 6013928 (2000-01-01), Yamazaki et al.
patent: 6054734 (2000-04-01), Aozasa
patent: 6087679 (2000-07-01), Yamazaki et al.
patent: 6133967 (2000-10-01), Moon
patent: 6140667 (2000-10-01), Yamazaki et al.
patent: 6160271 (2000-12-01), Yamazaki et al.
patent: 6278131 (2001-08-01), Yamazaki et al.
patent: 6288412 (2001-09-01), Hamada et al.
patent: 6307214 (2001-10-01), Ohtani et al.
patent: 6472684 (2002-10-01), Yamazaki et al.
patent: 6509602 (2003-01-01), Yamazaki et al.
patent: 04-130668 (1992-05-01), None
patent: 04-279064 (1992-10-01), None
patent: 05-275652 (1993-10-01), None
patent: 06-085258 (1994-03-01), None
patent: 06-125084 (1994-05-01), None
patent: 07-130652 (1995-05-01), None
patent: 07-135318 (1995-05-01), None
patent: 07-193246 (1995-07-01), None
patent: 07-321339 (1995-12-01), None
patent: 08-078329 (1996-03-01), None
patent: 11-284188 (1999-10-01), None
Specification and Drawings for U.S. Appl. Ser. No. 08/928,514, “A Method for Manufacturing a Semiconductor Device”.
Specification and Drawings for U.S. Appl. Ser. No. 09/084,738, “Semiconductor Thin Film and Semiconductor Device”.
Specification and Drawings for U.S. Appl. Ser. No. 09/645,329, “Semiconductor Thin Film and Semiconductor Device”.
Specification and Drawings for U.S. Appl. Ser. No. 09/592,936, “Semiconductor Thin Film and Semiconductor Device”.
R. Shimokawa et al., “Characterization of High-Efficiency Cst-Si Solar Cell Wafers by MBIC Measurement”, pp. 751-758, May 1988, Japanese Journal of Applied Physics, vol. 27, No. 5.
Hayashi Keisuke
Koyama Jun
Yamazaki Shunpei
Costellia Jeffrey L.
Nixon & Peabody LLP
Richards N. Drew
Semiconductor Energy Laboratory Co,. Ltd.
LandOfFree
Nonvolatile memory and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nonvolatile memory and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile memory and manufacturing method thereof will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3539465