Nonvolatile memory and fabrication method thereof

Details Nonvolatile memory and fabrication method thereof Nonvolatile memory and fabrication method thereof

2008-01-29

2008-01-29

Andujar, Leonardo (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S537000, C257S298000, C438S003000, C438S222000

Reexamination Certificate

active

11108823

ABSTRACT:
A nonvolatile memory and a fabrication method thereof. The nonvolatile memory includes a substrate, a bottom electrode deposited on the substrate, a resistor layer deposited on the bottom electrode, and a top electrode on the resistor layer. The bottom electrode includes LaNiO3and the resistor layer includes doped SrZrO3.

REFERENCES:
patent: 6965137 (2005-11-01), Kinney et al.
patent: 2004/0228172 (2004-11-01), Rinerson et al.
patent: 2005/0226062 (2005-10-01), Aratani et al.
patent: 2005/0260839 (2005-11-01), Allenspach et al.

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