Nonvolatile memory and fabrication method thereof

Details Nonvolatile memory and fabrication method thereof Nonvolatile memory and fabrication method thereof

2008-01-29

2008-01-29

Andujar, Leonardo (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S537000, C257S298000, C438S003000, C438S222000

Reexamination Certificate

active

07323733

ABSTRACT:
A nonvolatile memory and a fabrication method thereof. The nonvolatile memory includes a substrate, a bottom electrode deposited on the substrate, a resistor layer deposited on the bottom electrode, and a top electrode on the resistor layer. The bottom electrode includes LaNiO3and the resistor layer includes doped SrZrO3.

REFERENCES:
patent: 6965137 (2005-11-01), Kinney et al.
patent: 2004/0228172 (2004-11-01), Rinerson et al.
patent: 2005/0226062 (2005-10-01), Aratani et al.
patent: 2005/0260839 (2005-11-01), Allenspach et al.

Affiliated with

Also associated with

Rating

Nonvolatile memory and fabrication method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile memory and fabrication method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile memory and fabrication method thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2760590