Nonvolatile memory

Details Nonvolatile memory Nonvolatile memory

1995-01-18

1997-01-07

Nguyen, Viet Q.

Static information storage and retrieval

Systems using particular element

Ferroelectric

36518909, 257295, G11C 1122

Patent

active

055924093

ABSTRACT:
Nonvolatile memory with a simple structure where recorded information can be read without destruction: Voltage is impressed between control gate CG and memory gate MG at a writing operation. A ferroelectric layer 32 is polarized in accordance with the direction of the impressed voltage. The control gate voltage V.sub.CG to make a channel is low when the ferroelectric layer 32 is polarized with the control gate side being positive (polarized with second status). The control gate voltage V.sub.CG to make a channel is high when the ferroelectric layer 32 is polarized with the control gate side being negative (polarized with the first status). The reference voltage V.sub.ref is impressed to the control gate CG at the reading operation. A high drain current flows when the ferroelectric layer is polarized with the second status and low drain current flows when the ferroelectric layer is polarized with the first status. Recorded information can be read by detecting the drain current. With this reading operation, the polarization status is not destroyed.

REFERENCES:
patent: 4873664 (1989-10-01), Eaton, Jr.
patent: 4888733 (1989-12-01), Mobley
patent: 5303182 (1994-04-01), Nakao et al.
patent: 5341010 (1994-08-01), Shimoji
patent: 5345414 (1994-09-01), Nakamura
patent: 5412596 (1995-05-01), Hoshiba

Affiliated with

Also associated with

Rating

Nonvolatile memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1770207