Nonvolatile memory

Details Nonvolatile memory Nonvolatile memory

1995-06-15

1996-07-30

Clawson, Jr., Joseph E.

Static information storage and retrieval

Systems using particular element

Ferroelectric

257295, 365149, 36518909, G11C 1122

Patent

active

055418732

ABSTRACT:
A nonvolatile memory having a simple structure where recorded information can be read nondestructively. A voltage is applied between a control gate and a memory gate for writing. A ferroelectric layer is polarized in accordance with the polarization of the applied voltage. A control gate voltage, necessary to form a channel, is small when the ferroelectric layer is polarized with the control gate side negative (polarized with second polarization). The control gate voltage V.sub.cg necessary to form a channel is large when the ferroelectric layer is polarized with the control gate side positive (polarized with first polarization). The reference voltage is applied to the control gate for reading. A large drain current flows when the ferroelectric layer is polarized with the second polarization and a small drain current flows when the ferroelectric layer is polarized with the first polarization. Recorded information can be read by detecting the drain current. The polzarization state of the ferroelectric layer is not affected by the reading operation.

REFERENCES:
patent: 4360896 (1982-11-01), Brody
patent: 4873664 (1989-10-01), Eaton, Jr.
patent: 4888630 (1989-12-01), Patterson
patent: 4888733 (1989-12-01), Mobley

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