Nonvolatile memory

Details Nonvolatile memory Nonvolatile memory

2008-01-29

2008-01-29

Elms, Richard T. (Department: 2824)

Static information storage and retrieval

Read/write circuit

C365S185180, C365S185170, C365S185270

Reexamination Certificate

active

07324388

ABSTRACT:
A nonvolatile memory includes circuits each having first control transistors, memory transistors, second control transistors and memory transistors repeatedly connected in series in sequence. Inversion layers are formed in the direction intersecting the serial direction with turning on of the control transistors. A selection circuit selects a connection of the inversion layer placed under the first control transistor and its corresponding read/write circuit. The control transistors placed on both sides adjacent to the memory transistor are turned on to perform reading. The first control transistors placed on both sides of the second control transistor as viewed from side to side are turned on to perform writing into the other of the right and left memory transistors via one of the right and left memory transistors. The selection circuit connects the read/write circuit and the inversion layer in such a manner that the same read/write circuit is used in reading and writing for the same memory transistor.

REFERENCES:
patent: 6388293 (2002-05-01), Ogura et al.
patent: 6850438 (2005-02-01), Lee et al.
patent: 6894931 (2005-05-01), Yaegashi et al.
patent: 2004/0084714 (2004-05-01), Ishii et al.
patent: 2004-152977 (2004-05-01), None

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