Nonvolatile memories with tunnel dielectric with chlorine

Details Nonvolatile memories with tunnel dielectric with chlorine Nonvolatile memories with tunnel dielectric with chlorine

2008-06-06

2010-06-15

Mandala, Victor A (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C365S184000, C438S591000, C257SE29309, C257SE21423

Reexamination Certificate

active

07737487

ABSTRACT:
In a nonvolatile memory cell with charge trapping dielectric (150), the tunnel dielectric (140) includes chlorine adjacent to the charge trapping dielectric but no chlorine (or less chlorine) adjacent to the cell's channel region (120). The chlorine adjacent to the charge trapping dielectric serves to improve the programming and/or erase speed. The low chlorine concentration adjacent to the channel region prevents chlorine from degrading the data retention. Other features are also provided.

REFERENCES:
patent: 2006/0261401 (2006-11-01), Bhattacharyya
patent: 2007/0004136 (2007-01-01), Dong et al.
patent: 2008/0290398 (2008-11-01), Polishchuk et al.

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